We have fabricated low-temperature grown GaAs (LT-GaAs)-based plasmonic photoconductive antennas by RF sputtering of Au nanoparticles and have evaluated their terahertz detection properties. Localized surface plasmon resonance enhances the electric fields near the surface and increases the optical absorption of nanoparticles. The resonance frequency depends on the density of electrons, the effective electron mass, and the size and shape of the nanoparticles. Therefore, we tried to develop a high-sensitivity LT-GaAs photoconductive detector (PCD), which is effective over a wide range of wavelengths, by RF sputtering of Au nano-islands with a variety of aspect ratios from 1.2 to 5.1 on the dipole gap region of the PCD. As a result, we succeeded in increasing the sensitivity by 29% and 40% in the amplitude of observed terahertz pulse for 800 nm and 1560 nm femtosecond laser excitations, respectively.

We propose dynamic terahertz (THz) emission microscopy (DTEM) to visualize temporal–spatial dynamics of photoexcited carriers in electronic materials. DTEM utilizes THz pulses emitted from a sample by probe pulses irradiated after pump pulse irradiation to perform time-resolved two-dimensional mapping of the THz pulse emission, reflecting various carrier dynamics. Using this microscopy, we investigated carrier dynamics in the gap region of low-temperature-grown GaAs and semi-insulating GaAs photoconductive switches of the identical-dipole type. The observed DTEM images are well explained by the change in the electric potential distribution between the electrodes caused by the screening effect of the photoexcited electron-hole pairs.